Publications and presentations

Recent publications and presentations from the NEDDS group:

Invited presentations:

David Moran, K. Crawford, D. Qi , D. Macdonald, Alexandre Tallaire, C. Verona, E. Limiti, Oliver Williams
Using Transition-Metal Oxide Films for Increased Efficiency and Stability of Surface-Transfer Doping of Diamond for Electronic Applications 
MRS Fall Meeting, Dec 2016 proceedings

Kevin G. Crawford, Liang Cao, Dongchen Qi, Alexandre Tallaire, E. Limiti, C. Verona, Andrew T. S. Wee, and David A. J. Moran
Enhanced Doping of Hydrogen-terminated Diamond using Transition Metal Oxides for Improved Field Effect Transistor Operation
New Diamond and Nano Carbons 2016, Xi’an, China, May 2016

David A. J. Moran, Stephen Russell, Salah Sharabi, Alex Tallaire, Dongchen Qi, Andrew Wee
Recent Advances in Hydrogen-terminated Diamond FET Technology
UK Semiconductors 2013, Sheffield, UK, July 2013

D. A. J. Moran
Diamond – The Ultimate Material for Future High Power Electronics?
CMOS Emerging Technologies Research Symposium, Whistler, Canada, July 2013

Stephen Russell, Salah Sharabi, Alex Tallaire, Dongchen Qi, Andrew Wee, David A. J. Moran
Recent progress and future challenges in hydrogen-terminated diamond field effect transistor technology
SBDD XVIII – Diamond Workshop, Hasselt, Belgium, February 2013

D. A. J. Moran
Surface Channel Diamond Field Effect Transistors: Recent Progress and Future Challenges
Materials for Tomorrow Workshop, Singapore, December 2012

David A. J. Moran, Oliver J. L. Fox, Helen McLelland, Stephen Russell, Paul W. May
Short gate length surface-channel diamond transistors
HeTech European Workshop, Lille, France, November 2011

D. A. J. Moran, D. A. MacLaren, S. Porro, R. Hill,  H. McLelland, P. John, J. I. B. Wilson
Characterisation and Inspection of 50nm gate-length hydrogen terminated diamond Field Effect Transistors.
MRS Fall Meeting, Dec 2010 proceedings

 

Journal Publications and Conference Presentations:

A.W. McGlone, O.A. Williams, M. Tassieri, P. Dobson, D.A.J. Moran
Investigation into the Minimum Feature Size for ICP etched Micro and Nano-scale Polycrystalline Diamond Mechanical Resonators.
UK Diamond Research Conference, Warwick, U.K, July 2016

Kevin G. Crawford, Dongchen Qi, Alexandre Tallaire, Ernesto Limiti, Claudio. Verona, and David A. J. Moran
Surface Transfer Doping of Hydrogen-Terminated Diamond by V2O5 and MoO3
UK Diamond Research Conference, Warwick, U.K, July 2016

Kevin G. Crawford, Liang Cao, Dongchen Qi, Alexandre Tallaire, E. Limiti, C. Verona, Andrew T. S. Wee, and David A. J. Moran
Advancing the stability and high power operation of diamond FETs using transition metal oxides
UK Semiconductor Conference, Sheffield, U.K, July 2016

Kevin G. Crawford, Dongchen Qi, Alexandre Tallaire, E. Limiti, C. Verona, and David A. J. Moran
Enhanced Surface Transfer Doping of Diamond by V2O5
SBDD XXI “Diamond Workshop”, Hasselt, March 2016

Kevin G. Crawford, Liang Cao, Dongchen Qi, Alexandre Tallaire, E. Limiti, C. Verona, Andrew T. S. Wee, and David A. J. Moran
Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability
Applied Physics Letters, Volume 108, 042103, January 2016

David  Andrew  Macdonald, Alexandre  Tallaire, Claudio  Verona, Ernesto  Limiti, David  A.J.  Moran.
Stability of Operation of Atmosphere-Exposed, Hydrogen-Terminated Diamond FETs under Constant Operation
MRS 2015 Fall Meeting, 30th Nov – 3rd Dec 2015, Boston.

Andrew William McGlone, Oliver A. Williams, David A.J. Moran
Investigation into the Minimum Feature Size for Reactive-Ion Etched (RIE) Micro and Nano-Scale Polycrystalline Diamond Mechanical Resonators
MRS 2015 Fall Meeting, 30th Nov – 3rd Dec 2015, Boston.

Kevin George Crawford, Alexandre Tallaire, David A.J. Moran
Impact of ICP Etching on the Formation of Surface Defects on Hydrogen Terminated Diamond
MRS 2015 Fall Meeting, 30th Nov – 3rd Dec 2015, Boston.

Kevin George Crawford, Dongchen Qi, Alexandre Tallaire, Claudio Verona, Ernesto Limiti, David A.J. Moran.
Investigation into the Efficiency and Stability of Surface-Transfer Doped Hydrogen-Terminated Diamond Using MoO3
MRS 2015 Fall Meeting, 30th Nov – 3rd Dec 2015, Boston.

F. Cappelluti, G. Ghione, S. A. O. Russell, D. A. J. Moran, C. Verona and E. Limiti
Investigating the properties of interfacial layers in planar Schottky contacts on hydrogen-terminated diamond through direct current/small-signal characterization and radial line small-signal modelling
Applied Physics Letters, Volume 106, 103504, March 2015

S. A. O. Russell, S. Sharabi, A. Tallaire and D. A. J. Moran
RF Operation of Hydrogen-Terminated Diamond Field Effect Transistors: A Comparative Study
IEEE Transactions on Electron Devices, vol. 62, no. 3, pp. 751-756, March 2015

S.A.O. Russell, D.A.J. Moran, C. Verona, E. Limiti, F. Cappelluti, G. Ghione, A. Barnes
Single-crystal diamond microwave devices for space applications
European Microwave Integrated Circuit Conference (EuMIC), 2014, 154-157

V. Camarchia, F. Cappelluti, G. Ghione, E. Limiti, D.A.J. Moran, M. Pirola
An overview on recent developments in RF and microwave power H-terminated diamond MESFET technology
Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014

E. Limiti, W. Ciccognani, C. Verona, G. Ghione, F. Cappelluti, D. Moran, E. Giovine, F. Di Pietrantonio
H-Terminated single-crystal diamond FETs for space applications
23rd European Workshop on Heterostructure Technology (HETECH), 2014

E. Limiti, W. Ciccognani, S. Colangeli, F. Di Pietrantonio, C. Verona, G. Ghione, F. Cappelluti, V. Camarchia, D. Moran, S. Russell, A. Barnes
Fabrication and Performance of Microwave Diamond Devices for Space Applications
7th Wide Band Gap Semiconductor and Components Workshop, 2014, 97-101

Kevin G. Crawford, Stephen A. O. Russell, Dongchen Qi, Liang Cao, Alex Tallaire, Andrew T. S. Wee, David A. J. Moran
Temperature Stable Surface Transfer Doping of H-Terminated Diamond via MoO3
Hetech European Workshop, Giessen, Germany, October 2014

David A. J. Moran, Kevin G. Crawford, Stephen A. O. Russell, Dongchen Qi, Liang Cao, Alex Tallaire, Andrew T. S. Wee
Advanced Surface Transfer Doping of Hydrogen-Terminated Diamond using MoO3.
UK Diamond Research Conference, Warwick, U.K, July 2014

Kevin G. Crawford, Stephen A. O. Russell, Dongchen Qi, Liang Cao, Alex Tallaire, and Andrew T. S. Wee, David A. J. Moran
Advancing Surface Transfer Doping of Hydrogen-Terminated Diamond via Deposition of MoO3
SBDD XIX “Diamond Workshop”, Hasselt, February 2014

Stephen A. O. Russell, Liang Cao, Dongchen Qi, Alexandre Tallaire, Kevin G. Crawford, Andrew T. S. Wee and David A. J. Moran
Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study
Applied Physics Letters, Volume 103, Issue 22, 202112, November 2013

Kevin G. Crawford, Stephen A. O. Russell, Dongchen Qi, Liang Cao, Alex Tallaire, Andrew T. S. Wee, David A. J. Moran
Advancing Surface Transfer Doping of Hydrogen Terminated Diamond via Inorganic Materials
Hetech European Workshop, Glasgow, UK, September 2013

Andrew IM Greer, Krishna Seunarine, Ali Z Khokhar, Ian MacLaren, Alistair S Brydone, David AJ Moran, Nikolaj Gadegaard
Increased efficiency of direct nanoimprinting on planar and curved bulk titanium through surface modification
Microelectronic Engineering, Volume 112, December 2013, Pages 67–73

S.A.O. Russell, S. Gupta, H. Gleskova, A. Tallaire, D.A.J. Moran
The impact of processing on hydrogen-terminated diamond TLM structures exposed to atmosphere and coated with F16CuPc
SBDD XVIII “Diamond Workshop”, Hasselt, Belgium, March 2013

Stephen A. O. Russell, Salah Sharabi, Alex Tallaire and David A. J. Moran
Hydrogen-Terminated Diamond Field-Effect Transistors with Cutoff Frequency of 53 GHz
IEEE Electron Device Letters, Vol. 33, No. 10, October. 2012 p. 1471 – 1473

David A. J. Moran, Stephen A. O. Russell, Salah Sharabi and Alexandre Tallaire
High Frequency Hydrogen-Terminated Diamond Field Effect Transistor Technology
IEEE 12th International Conference on Nanotechnology, Birmingham, UK, August 2012.

A. I. M. Greer and D. A. J. Moran
Charge dissipation layer optimisation for nano-scale electron-beam lithography pattern definition onto diamond
Diamond and Related Materials, 29, July 2012, p. 13 – 17.

Stephen A.O. Russell, Salah Sharabi, Alex Tallaire, Helen McLelland and David A.J. Moran
Diamond Field Effect Transistors
ARMMS RF & Microwave Society conference, Oxfordshire, UK, April 2012

A. I. M. Greer, K. Seunarine, A. Z. Khokhar, X. Li, D. A. J. Moran and N. Gadegaard
Direct nano-patterning of commercially pure titanium with ultra-nanocrystalline diamond stamps
Physica Status Solidi (a), 209, No.9, June 2012, p. 1721 – 1725.

S.A.O. Russell, S. Sharabi, D. MacFarlane, R. Caterino, J.A. Garrido, D.A.J. Moran
A comparison between de-embedding strategies for the extraction of the RF performance of hydrogen-terminated diamond FETs
SBDD XVII “Diamond Workshop”, Hasselt, Belgium, March 2012

A.I.M. Greer, K. Seunarine, A.Z. Khokhar, X. Li, D.A.J. Moran, N. Gadegaard
Direct nano-patterning of commercially pure titanium with ultra-nanocrystalline diamond stamps
SBDD XVII “Diamond Workshop”, Hasselt, Belgium, March 2012

A.I.M. Greer, D.A.J. Moran
The effect of charge dissipation layer thickness on e-beam feature size for polycrystalline diamond
SBDD XVII “Diamond Workshop”, Hasselt, Belgium, March 2012

D. A. J. Moran, D. A. MacLaren, S. Porro, H. McLelland, P. John, J. I. B. Wilson
Processing Of 50nm Gate-length Hydrogen Terminated Diamond FETs for High Frequency and High Power Applications
Microelectronic Engineering, Volume 88,  Issue 8, August 2011, Pages: 2691-2693

David A. J. Moran, Oliver J. L. Fox, Helen McLelland, Stephen Russell, Paul W. May
Intrinsic DC operation and performance potential of 50 nm gate length hydrogen-terminated diamond field effect transistors.
UK Diamond Research Conference, Warwick, U.K, July 2011

David A. J. Moran, Oliver J. L. Fox, Helen McLelland, Stephen Russell, Paul W. May
Intrinsic DC Operation and Performance Potential of 50nm Gate Length Hydrogen-terminated Diamond Field Effect Transistors
Device Research Conference, Santa Barbara, CA, USA, 2011 (p. 137 – 138)

David A. J. Moran, Oliver J. L. Fox, Helen McLelland, Stephen Russell, Paul W. May
Scaling of hydrogen-terminated diamond FETs to sub-100 nm gate dimensions
IEEE Electron Device Letters, Vol. 32,  No. 5,  May. 2011 p. 599 – 601

David A. J. Moran, Oliver J. L. Fox, Helen McLelland, Stephen Russell, Paul W. May
Inspection of Intrinsic Operation and DC Performance of 50nm Gate Length Hydrogen-Terminated Diamond Field Effect Transistors using an optimised fabrication process.
SBDD XVI “Diamond Workshop”, Hasselt, Belgium, February 2011

D. A. J. Moran, D. A. MacLaren, S. Porro, R. Hill,  H. McLelland, P. John, J. I. B. Wilson
Development and Operation of 50nm Gate Length Hydrogen Terminated Diamond Field Effect Transistors.
UK Diamond Research Conference, Warwick, U.K, July 2010

D.A.J. Moran, S.Porro, D. MacLaren, R. J. Hill, J. I. B. Wilson
Sub-100nm Gate-Length hydrogenated diamond FETs.
UK Semiconductors Conference, Sheffield, U.K, July 2009