Media coverage and public engagement

February 2014
Andy Greer wins the Oxford Instruments SEM picture competition with his Diamond Jubilee nano coin.


Andy’s image also won a Special Art award in the Raith Micrograph competition



November 2013
Recent work by the NEDDS group has demonstrated an improved process for higher efficiency and more stable doping of diamond.

STD using MoO3

Media  Coverage:


September 2012
Diamond transistor with the highest cut-off frequency performance yet achieved made by the NEDDS group.

ft 4


By optimising the processing used to make diamond transistors with a reduced gate length of 50 nm, devices with a cut-off frequency of 53 GHz have been demonstrated by the NEDDS group. This is the highest yet reported for a diamond based transistor. This work was reported in the IEEE journal Electron Device Letters:

Media  Coverage:


May 2012
The NEDDS group make “the world’s smallest diamond coin” to commemorate Queen Elizabeth II’s Diamond Jubilee:



To help promote greater understanding and public awareness of the type of research undertaken by the NEDDS group and the nanofabrication capabilities of the James Watt Nanofabrication Centre, in 2012 Andrew Greer created a promotional diamond coin in commemoration of the Queen’s Diamond Jubilee. The coin was created in two stages. First the profile of Queen Elizabeth was etched 200 nm deep into a film of nanocrystalline diamond on a silicon substrate. Next, the circular shape of the coin was formed by etching through the remainder of the 1 um thick diamond layer to the silicon substrate. This deeper etch required to define the shape of the coin is less precise than the etch used to define the profile, which produces the roughness observed at the coin edges.

Some of the Jubilee Diamond Nano-Coin media coverage:
BBC news –
University of Glasgow –
Wired Magazine –
Focus Magazine –
The Times Newspaper –


May 2012
David produces an article for GIST (Glasgow Insight into Science and Technology) magazine discussing the attraction of diamond for the production of electronics that are required  to operate in the hostile conditions of outer space:

GIST logo


July 2009
Compute Scotland publish an article on David’s diamond electronics research:


April 2009
The NEDDS group produce a diamond transistor with a gate length of 50 nm, the smallest yet achieved. 

Diamond FET TEMThe critical dimensions of the gate contact of diamond field effect transistors (FETs) produced by the NEDDS group have been reduced to 50 nm, the smallest yet achieved. Shrinking the size of the gate contact will lead to higher frequency performance, faster switching diamond based electronic devices.

Media coverage: